GaN-based power white LED is the focus of current development, which has the characteristics of high heat and short emission wavelength, and the requirements for packaging material performance are more stringent.
Used at the same time the high refractive index, uv and heat aging resistance, and low stress of encapsulation material can obviously improve the LED light output power, and can prolong the life of the product use and the development of the high power LED devices at the same time, also requires organic silicon encapsulating materials developed as early as possible with high transparency, refractive index, resistance to ultraviolet aging and thermal aging ability are excellent products.
Aiming at the problems existing in organosilicone materials, such as low refractive index, poor adhesion and low mechanical strength, epoxy modification method is adopted to combine the advantages of the two, or hybridize with inorganic materials to improve the refractive index of organosilicone materials.